N-type doping of low-pressure chemical vapor deposition grown β-Ga₂O₃ thin films using solid-source germanium

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped...

Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition

Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P conce...

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

UNLABELLED Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to ...